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| SMD Efficient Fast Recovery Rectifier CFRB201-G Thru CFRB207-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 2.0 Amp Features: Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0. Fast recovery time: 150 ~ 500nS Low leakage current 0.083(2.11) 0.075(1.91) 0.155(3.94) 0.130(3.30) DO-214AA (SMB) Mechanical Data: Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.093 gram 0.096(2.44) 0.083(2.13) 0.185(4.70) 0.160(4.06) 0.012(0.31) 0.006(0.15) 0.050(1.27) 0.030(0.76) 0.220(5.59) 0.200(5.08) 0.008(0.20) 0.203(0.10) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics: Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. Average Forward Current Max. Instantaneous Forward Voltage at 2.0A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature Symbol CFRB 201-G 50 50 35 CFRB 202-G 100 100 70 CFRB 203-G 200 200 140 CFRB 204-G 400 400 280 CFRB 205-G 600 600 420 CFRB 206-G 800 800 560 CFRB 207-G 1000 1000 700 Unit V V V VRRM VDC VRMS IFSM Io VF Trr IR R JL 60 A 2.0 1.3 100 250 500 A V nS uA o C/W o o 5.0 50 20 -55 to +150 -55 to +150 Tj TSTG C C Note1: Thermal resistance from junction to ambient. "-G" suffix designates RoHS compliant Version www.comchiptech.com Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CFRB201-G Thru CFRB207-G) Fig.1 - Reverse Characteristics 1000 100 Fig.2 - Forward Characteristics Reverse Current ( uA ) Forward current ( A ) 100 Tj=125 C 10 10 1 1.0 Tj=25 C 0.1 0 0.1 Tj=25 C Pulse width 300uS 4% duty cycle 0.01 30 60 90 120 150 0 0.4 0.8 1.2 1.6 2.0 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig. 3 - Junction Capacitance Peak Surge Forward Current ( A ) 140 Fig. 5 - Non Repetitive Forward Surge Current 60 8.3mS Single Half Sine Wave JEDEC methode Junction Capacitance (pF) 120 100 80 60 40 20 0 0.1 1.0 10 100 1000 Tj=25 C f=1.0MHz Vsig=50mV p-p 50 40 30 Tj=25 C 20 10 0 1 5 10 50 1 00 Reverse Voltage (V) Number of Cycles at 60Hz Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics Fig. 6 - Current Derating Curve 2.1 50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A Average Forward Current ( A ) trr | | | | | | | | 2.4 2.0 1.6 1.2 0.8 0.4 00 (+) 25Vdc (approx.) () 1 NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) "-G" suffix designates RoHS compliant Version www.comchiptech.com Page2 |
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